我国高端集成电路引线框架高性能铜合金材料存在自主创新能力差、生产技术较为落后、应用研究薄弱，以及以中低端产品为主，高端关键产品主要依赖进口、自给率不足 10%等突出问题。具体表现为：1. 合金设计与组织性能调控等基础研究碎片化、零散化，自主知识产权合金牌号和体系很少；2.材料关键性能匹配性差，综合优化理论和方法缺乏；3. 形/性一体化调控技术落后，产品尺寸精度低、残余应力大、均匀性和一致性差；4. 材料研发与下游应用研究脱节，评价方法和标准体系不规范、不系统；5.材料研发模式落后，产品更新和迭代周期长、成本高。

针对高端集成电路引线框架材料存在的问题和自主开发下一代极大规模集成电路的迫切需求，本项目采用材料基因工程方法，深入开展基础和应用研究，突破产业化关键技术，开发高性能 Cu-Ni-Co-Si 系和 Cu-Cr-X 系带材产品，实现批量生产和芯片封装示范应用。

面向高端集成电路制造需求，突破国外 C7035 合金专利限制，开发冲制/蚀刻框架用高性能低成本 Cu-Ni-Co-Si 系带材；打破国外独家垄断，研发蚀刻框架用 Cu-Cr-X 系带材；建立两种铜合金数据库，数据≥5000 条；建立两种合金成分强度/导电率模型，精度≥90%；开发两种合金带材工业制造成套技术，性能指标达到指南要求；建成 5 千吨级 Cu-Ni-Co-Si 带材和千吨级 Cu-Cr-X 带材生产线；实现芯片封装示范应用 2 种以上，化解高端集成电路引线框架关键材料“卡脖子”风险。

The high-performance copper alloy materials for high-end integrated circuit lead frames in China face significant challenges, including poor independent innovation capabilities, outdated production technologies, weak application research, and a predominant focus on mid-to-low-end products. Moreover, key high-end products heavily rely on imports, with a self-sufficiency rate of less than 10%.These challenges are manifested in several aspects: ① The basic research, such as alloy design and organizational performance control, is fragmented and scattered, with very few alloys having independent intellectual property rights and a systematic framework; ② The critical performance matching of materials is poor, and there is a lack of comprehensive optimization theories and methods; ③ The technology for integrated control of shape/properties is outdated, resulting in low product dimensional accuracy, high residual stress, and poor uniformity and consistency; ④ There is a disconnect between material research and downstream application research, and the evaluation methods and standard systems are not standardized and systematic; ⑤ The material research and development mode is outdated, leading to long product update and iteration cycles, as well as high costs.

In response to the challenges faced by high-end integrated circuit lead frame materials and the urgent need for independent development of the next generation of very large-scale integrated circuits, this project adopts a material genome engineering approach. It conducts in-depth basic and applied research, breaks through key industrialization technologies, and develops high-performance Cu-Ni-Co-Si series and Cu-Cr-X series strip products. The goal is to achieve mass production and demonstrate applications in chip packaging.

In response to the manufacturing demands of high-end integrated circuits, the project aims to achieve the following objectives: Overcome foreign patent restrictions on the C7035 alloy and develop high-performance, low-cost Cu-Ni-Co-Si series strip materials for stamping/etching frames; Break foreign exclusive monopolies by researching Cu-Cr-X series strip materials for etching frames; Establish two copper alloy databases with a minimum of 5000 records each; Create two alloy composition-strength/conductivity models with an accuracy of at least 90%; Develop comprehensive industrial manufacturing technologies for two alloy strips, ensuring that property indicators meet specified guidelines; Construct production lines for 5,000-ton Cu-Ni-Co-Si strips and 1,000-ton Cu-Cr-X strips; Demonstrate applications in chip packaging for at least two scenarios to mitigate critical material risks associated with high-end integrated circuit lead frame production.