本发明公开一种基于反向正脉冲技术的四面体非晶碳膜ta‑C多层结构涂层的制备方法，包括以下步骤：S1、将清洗后的基体停留在Cr靶前，通过功率为15‑20kW的脉冲反应溅射CrN底层；S2、停留在Cr靶前，通过功率为5‑10kW的脉冲反应溅射CrC过渡层；S3、再停留在石墨靶前，通过功率为5‑8kw的脉冲多靶磁控溅射ta‑C涂层；在每个脉冲周期的尾部施加反向正脉冲的50‑550V反向电压、频率范围200‑5000Hz。本发明制备ta-C涂层硬度达到30Gpa以上，具有低于0.1的摩擦系数，在制备ta‑C碳薄膜时，可将薄膜的离子能量提高2‑4倍；有效离子利用率和薄膜沉积速率提高50‑60％。

The present invention discloses a preparation method for a tetrahedral amorphous carbon film Ta C multilayer structure coating based on reverse positive pulse technology, comprising the following steps: S1, staying the cleaned substrate in front of the Cr target and sputtering the CrN bottom layer through a pulse reaction with a power of 15-20 kW; S2, staying in front of the Cr target, sputtering the CrC transition layer through a pulse reaction with a power of 510kW; S3, stay in front of the graphite target again and use a pulse multi target magnetron sputtering Ta C coating with a power of 58 kW; Apply a reverse voltage of 50 550V with a reverse positive pulse and a frequency range of 200 5000Hz at the end of each pulse cycle. The Ta-C coating prepared by the present invention has a hardness of over 30Gpa and a friction coefficient below 0.1. When preparing Ta-C carbon thin films, the ion energy of the films can be increased by 24 times; The effective ion utilization rate and film deposition rate increase by 50% and 60%.